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1. product profile 1.1 general description npn/pnp low v cesat breakthrough in small signal (biss) transistor in a sot96-1 (so8) medium power surface-mounted device (smd) plastic package. 1.2 features and benefits ? low collector-emitter sa turation voltage v cesat ? optimized switching time ? high collector curr ent capability i c and i cm ? high collector cu rrent gain (h fe ) at high i c ? high efficiency due to less heat generation ? smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications ? dc-to-dc conversion ? battery-driven devices ? power management ? charging circuits 1.4 quick reference data PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor rev. 1 ? 14 july 2010 product data sheet table 1. product overview type number package npn/npn complement pnp/pnp complement nxp name PBSS4032SPN sot96-1 so8 pbss4032sn pbss4032sp table 2. quick reference data symbol parameter conditions min typ max unit tr1; npn low v cesat transistor v ceo collector-emitter voltage open base - - 30 v i c collector current - - 5.7 a i cm peak collector current single pulse; t p 1ms --10a r cesat collector-emitter saturation resistance i c =4a; i b =0.4a [1] - 45 62.5 m
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 2 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor [1] pulse test: t p 300 s; ? 0.02. 2. pinning information 3. ordering information 4. marking tr2; pnp low v cesat transistor v ceo collector-emitter voltage open base - - ? 30 v i c collector current - - ? 4.8 a i cm peak collector current single pulse; t p 1ms - - ? 10 a r cesat collector-emitter saturation resistance i c = ? 4a; i b = ? 0.4 a [1] - 6598m table 2. quick reference data ?continued symbol parameter conditions min typ max unit table 3. pinning pin description simplified outline graphic symbol 1emitter tr1 2 base tr1 3emitter tr2 4 base tr2 5 collector tr2 6 collector tr2 7 collector tr1 8 collector tr1 4 5 1 8 006aaa98 5 8765 1234 tr1 tr2 table 4. ordering information type number package name description version PBSS4032SPN so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1 table 5. marking codes type number marking code PBSS4032SPN 4032spn
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 3 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit tr1 (npn) i c collector current - 5.7 a tr2 (pnp) i c collector current - ? 4.8 a per transistor; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 30 v v ceo collector-emitter voltage open base - 30 v v ebo emitter-base voltage open collector - 5 v i cm peak collector current single pulse; t p 1ms -10a i b base current - 1 a p tot total power dissipation t amb 25 c [1] -0.73w [2] -1w [3] -1.7w per device p tot total power dissipation t amb 25 c [1] -0.86w [2] -1.4w [3] -2.3w t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 4 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. per device: power derating curves t amb ( c) ? 75 175 125 25 75 ? 25 006aac302 1.0 2.0 3.0 p tot (w) 0.0 (1) (2) (3) table 7. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air [1] --170k/w [2] --125k/w [3] --75k/w r th(j-sp) thermal resistance from junction to solder point --40k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] --145k/w [2] --90k/w [3] --55k/w
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 5 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor fr4 pcb, standard footprint fig 2. per transistor: transient therma l impedance from junction to ambien t as a function of pulse duration; typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 3. per transistor: transient therma l impedance from junction to ambien t as a function of pulse duration; typical values 006aac303 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac304 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 6 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor ceramic pcb, al 2 o 3 , standard footprint fig 4. per transistor: transient therma l impedance from junction to ambien t as a function of pulse duration; typical values 006aac305 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 1 10 2 z th(j-a) (k/w) 10 ? 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 7 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 7. characteristics table 8. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit tr1; npn low v cesat transistor i cbo collector-base cut-off current v cb =30v; i e = 0 a - - 100 na v cb =30v; i e =0a; t j =150 c --50 a i ces collector-emitter cut-off current v ce =24v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na h fe dc current gain v ce =2v [1] i c = 500 ma 300 500 - i c = 1 a 300 500 - i c = 2 a 250 450 - i c = 4 a 200 400 - i c = 6 a 150 300 - v cesat collector-emitter saturation voltage [1] i c =1a; i b = 50 ma - 90 125 mv i c =1a; i b = 10 ma - 130 180 mv i c =2a; i b = 40 ma - 150 210 mv i c =4a; i b = 400 ma - 185 250 mv i c =4a; i b = 40 ma - 250 375 mv i c =6a; i b = 300 ma - 300 450 mv r cesat collector-emitter saturation resistance i c =4a; i b =400ma [1] - 45 62.5 m v besat base-emitter saturation voltage [1] i c =1a; i b =100ma - 0.76 0.9 v i c =4a; i b =400ma - 0.91 1.05 v v beon base-emitter turn-on voltage v ce =2v; i c =2a [1] -0.770.85v t d delay time v cc =12.5v; i c =1a; i bon =0.05a; i boff = ? 0.05 a -35-ns t r rise time - 30 - ns t on turn-on time - 65 - ns t s storage time - 150 - ns t f fall time - 65 - ns t off turn-off time - 215 - ns f t transition frequency v ce =10v; i c =100ma; f=100mhz -140-mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz -65-pf
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 8 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor [1] pulse test: t p 300 s; ? 0.02. tr2; pnp low v cesat transistor i cbo collector-base cut-off current v cb = ? 30 v; i e =0a - - ? 100 na v cb = ? 30 v; i e =0a; t j =150 c -- ? 50 a i ces collector-emitter cut-off current v ce = ? 24 v; v be =0v - - ? 100 na i ebo emitter-base cut-off current v eb = ? 5v; i c =0a - - ? 100 na h fe dc current gain v ce = ? 2v [1] i c = ? 500 ma 200 380 - i c = ? 1 a 200 330 - i c = ? 2 a 150 250 - i c = ? 4a 60 100 - i c = ? 5a 40 60 - v cesat collector-emitter saturation voltage [1] i c = ? 1a; i b = ? 50 ma - ? 115 ? 165 mv i c = ? 1a; i b = ? 10 ma - ? 170 ? 240 mv i c = ? 2a; i b = ? 40 ma - ? 210 ? 300 mv i c = ? 4a; i b = ? 400 ma - ? 260 ? 390 mv i c = ? 4a; i b = ? 200 ma - ? 300 ? 450 mv i c = ? 5a; i b = ? 250 ma - ? 340 ? 510 mv r cesat collector-emitter saturation resistance i c = ? 4a; i b = ? 400 ma [1] -6598m v besat base-emitter saturation voltage [1] i c = ? 1a; i b = ? 100 ma - ? 0.8 ? 0.9 v i c = ? 4a; i b = ? 400 ma - ? 0.99 ? 1.1 v v beon base-emitter turn-on voltage v ce = ? 2v; i c = ? 2a [1] - ? 0.81 ? 0.9 v t d delay time v cc = ? 12.5 v; i c = ? 1a; i bon = ? 0.05 a; i boff =0.05a -30-ns t r rise time - 60 - ns t on turn-on time - 90 - ns t s storage time - 140 - ns t f fall time - 80 - ns t off turn-off time - 220 - ns f t transition frequency v ce = ? 10 v; i c = ? 100 ma; f=100mhz -115-mhz c c collector capacitance v cb = ? 10 v; i e =i e =0a; f=1mhz -85-pf table 8. characteristics ?continued t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 9 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c fig 5. tr1 (npn): dc current gain as a function of collector current; typical values fig 6. tr1 (npn): collector cu rrent as a function of collector-emitter voltage; typical values v ce =2v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr1 (npn): base-emitte r voltage as a function of collector current; typical values fig 8. tr1 (npn): base-emitter saturation voltage as a function of collector current; typical values 006aac306 400 600 200 800 1000 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) v ce (v) 0.0 5.0 4.0 2.0 3.0 1.0 006aac307 4.0 8.0 12.0 i c (a) 0.0 i b (ma) = 70 63 56 49 42 35 28 21 14 7 006aac308 0.4 0.8 1.2 v be (v) 0.0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) 006aac309 0.6 0.8 0.4 1.0 1.2 v besat (v) 0.2 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3)
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 10 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. tr1 (npn): collec tor-emitter saturation voltage as a function of collector current; typical values fig 10. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. tr1 (npn): collec tor-emitter saturation resistance as a function of collector current; typical values fig 12. tr1 (npn): collector-emitter saturation resistance as a function of collector current; typical values 006aac310 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (1) (2) (3) 006aac311 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (1) (3) (2) i c (ma) 10 ? 1 10 4 10 3 110 2 10 006aac312 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (3) (1) (2) i c (ma) 10 ? 1 10 4 10 3 110 2 10 006aac313 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (3) (1) (2)
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 11 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor v ce = ? 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c fig 13. tr2 (pnp): dc current gain as a function of collector current; typical values fig 14. tr2 (pnp): collector current as a function of collector-emitter voltage; typical values v ce = ? 2v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c fig 15. tr2 (pnp): base-emitter voltage as a function of collector current; typical values fig 16. tr2 (pnp): base-emitter saturation voltage as a function of collector current; typical values 006aac314 400 200 600 800 h fe 0 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (3) (2) v ce (v) 0.0 ? 5.0 ? 4.0 ? 2.0 ? 3.0 ? 1.0 006aac315 ? 4.0 ? 8.0 ? 12.0 i c (a) 0.0 i b (ma) = ? 600 ? 60 ? 540 ? 420 ? 480 ? 360 ? 300 ? 240 ? 180 ? 120 006aac316 ? 0.6 ? 1.0 ? 1.4 v be (v) ? 0.2 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (3) (2) 006aac317 ? 0.6 ? 1.0 ? 1.4 v besat (v) ? 0.2 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (3) (2)
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 12 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 17. tr2 (pnp): collec tor-emitter saturation voltage as a function of collector current; typical values fig 18. tr2 (pnp): collecto r-emitter sa turation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 19. tr2 (pnp): collec tor-emitter saturation resistance as a function of collector current; typical values fig 20. tr2 (pnp): collecto r-emitter sa turation resistance as a function of collector current; typical values 006aac318 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 ? 10 ? 1 ? 1 v cesat (v) ? 10 ? 2 (1) (3) (2) 006aac319 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 ? 10 ? 1 ? 1 v cesat (v) ? 10 ? 2 (1) (3) (2) i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 006aac320 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (3) (1) (2) i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 006aac321 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (3) (1) (2)
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 13 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 8. test information fig 21. tr1 (npn): biss transist or switching time definition v cc = 12.5 v; i c =1a; i bon = 0.05 a; i boff = ? 0.05 a fig 22. tr1 (npn): test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 14 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor fig 23. tr2 (pnp): biss transist or switching time definition v cc = ? 12.5 v; i c = ? 1a; i bon = ? 0.05 a; i boff =0.05a fig 24. tr2 (pnp): test circuit for switching times 006aaa266 ? i bon (100 %) ? i b input pulse (idealized waveform) ? i boff 90 % 10 % ? i c (100 %) ? i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 15 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . fig 25. package outline sot96-1 (so8) 03-02-18 dimensions in mm 1.0 0.4 1.75 pin 1 index 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 6.2 5.8 1.27 table 9. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 1000 2500 PBSS4032SPN sot96-1 8 mm pitch, 12 mm tape and reel -115 -118
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 16 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 11. soldering fig 26. reflow soldering footprint sot96-1 (so8) fig 27. wave soldering footprint sot96-1 (so8) sot096-1_ fr occupied area solder lands dimensions in mm placement accuracy 0.25 1.30 0.60 (8 ) 1.27 (6 ) 4.00 6.60 5.50 7.00 sot096-1_ fw solder resist occupied area solder lands dimensions in mm board direction placement accurracy 0.25 4.00 5.50 1.30 0.3 (2 ) 0.60 (6 ) 1.20 (2 ) 1.27 (6 ) 7.00 6.60 enlarged solder land
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 17 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 12. revision history table 10. revision history document id release date data sheet status change notice supersedes PBSS4032SPN v.1 20100714 pr oduct data sheet - -
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 18 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
PBSS4032SPN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 14 july 2010 19 of 20 nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PBSS4032SPN 30 v npn/pnp low v cesat (biss) transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 14 july 2010 document identifier: PBSS4032SPN please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 packing information . . . . . . . . . . . . . . . . . . . . 15 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 14 contact information. . . . . . . . . . . . . . . . . . . . . 19 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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